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Peak amplitude of target current determines deposition rate loss during high power pulsed magnetron sputtering

机译:目标电流的峰值幅度决定了高功率脉冲磁控管溅射过程中的沉积速率损失

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摘要

Film growth rates during DCMS and HIPIMS sputtering in Ar are measured for ten technologically relevant elemental target materials: Al, Si, Ti, Cr, Y, Zr, Nb, Hf, Ta, and W, spanning wide range of masses, ionization energies, and sputter yields. Surprisingly, the ratio of power-normalized HIPIMS and DCMS rates a decays exponentially with increasing peak target current density J(T)(max) for all metals. The effect of J(T)(max) on alpha is dramatic: alpha approximate to 1 in the limit of lowest J(T)(max) values tested (0.04 A/cm(2)) and decreases to only 0.12 with J(T)(max) similar to 3 A/cm(2). With the exception of Al and Si, alpha(J(T)(max)) curves overlap indicating that the debated rate loss in HIPIMS is to large extent determined by the peak amplitude of the HIPIMS target current for all tested metals. Back attraction of ionized target species is responsible for such large variation in a. (C) 2015 Elsevier Ltd. All rights reserved.
机译:测量了Ar在DCMS和HIPIMS溅射过程中的十种与技术相关的元素靶材料的膜生长速率:Al,Si,Ti,Cr,Y,Zr,Nb,Hf,Ta和W,其质量范围很广,电离能很大,和溅射产量。出乎意料的是,功率归一化的HIPIMS与DCMS比率a的比率随所有金属的峰值目标电流密度J(T)(max)的增加而呈指数下降。 J(T)(max)对alpha的影响是戏剧性的:在测试的最低J(T)(max)值(0.04 A / cm(2))的极限内,alpha大约为1,而对于J(T T)(最大值)类似于3 A / cm(2)。除Al和Si外,α(J(T)(max))曲线重叠,表明HIPIMS中争论的速率损失在很大程度上取决于所有测试金属的HIPIMS目标电流的峰值幅度。离子化目标物质的反向吸引是造成a如此大变化的原因。 (C)2015 Elsevier Ltd.保留所有权利。

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